Manufacturing method and device for a polycrystalline silicon
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United States of America Patent
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Mar 18, 1997
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app pub date -
Sep 15, 1995
filing date -
May 27, 1993
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Abstract
In a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphous silicon if needed. The amorphous silicon is preliminarily heated and melted, and is evenly supplied with heat when the amorphous silicon is re-crystallized, to thereby slow down the re-crystallization. Also, a manufacturing device has first and second light sources for supplying an optical energy to a-Si formed on substrate. A uniformed and large sized grain can be formed, and specifically, cost reduction is possible since the general glass substrate can be used.
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