Method for concurrent formation of contact and via holes

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United States of America Patent

PATENT NO 5613296
SERIAL NO

08420997

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In order to facilitate the fabrication of wiring layers in integrated circuit devices, the conductive path interconnections between areas of conduction on three layers, the three layers being separated by insulating layers, of the integrated circuit are fabricated during the same sequence of operations. The regions of conduction can be associated with the surface of a semiconductor substrate along with associated components fabricated thereon and two wiring layers, or the regions of conduction can be associated with three wiring layers. After the second insulating layer is formed, but before the formation of the final conductive layer, holes are created, a portion of the holes extending through the second insulating region to the prior wiring layer and a portion of the holes extending through the second insulting layer and through the first insulating layer to a semiconductor substrate or to an initial wiring layer. In order to provide a conductive plug for high aspect holes, a final conductive layer is formed, and pressure is applied thereto, forcing the conductive material into the holes. The conductive material remaining is patterned and etched to form a final wiring layer.

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Patent Owner(s)

Patent OwnerAddress
TEXAS INSTRUMENTS INCORPORATED12500 TI BOULEVARD MS 3999 DALLAS TX 75243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurino, Hiroyuki Ushiku, JP 6 104
Ogata, Yasuhiro Tsuchiura, JP 47 713

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