Method for making metallized capacitor having increased dielectric breakdown voltage
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United States of America Patent
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Mar 25, 1997
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N/A
app pub date -
Jul 29, 1994
filing date -
Feb 19, 1993
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Expired
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Abstract
A metallized film capacitor in which the metallization is made as thin as possible in order to increase the dielectric strength of the film. In the industry, typical metallization thicknesses range from approximately 1-4 ohms/sq, however, the present invention employs thicknesses which range from 5-300 ohms/sq. And, depending on which thickness is used, the effective dielectric strength of the film can be substantially increased. Additionally, the capacitor or various components thereof are exposed to a gas plasma for further increasing the dielectric breakdown voltage.
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