Power transistor module wiring structure
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United States of America Patent
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-
Apr 1, 1997
Grant Date -
N/A
app pub date -
Apr 22, 1994
filing date -
Apr 23, 1993
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In packaged bridge circuit modules with power switching transistors such as IGBT's, internal wiring inductance can cause switching voltage spikes and imbalance between switching transistors. Upon inclusion of suitably arranged and configured inductance elements, internal wiring inductance can produce a counter-electromotive force during switching. To this end, an internal connecting terminal may branch from an output terminal, a bridge-shaped internal connecting terminal may be connected between an emitter circuit pattern of one power transistor and a collector circuit pattern of another power transistor, or signal terminals as auxiliary emitter terminals of two power transistors may be connected to an inductance providing region in a current path of an emitter circuit pattern.
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