High-frequency semiconductor wafer processing apparatus and method
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United States of America Patent
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Apr 8, 1997
Issued Date -
N/A
app pub date -
Jun 25, 1993
filing date -
Oct 3, 1989
priority date (Note) -
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Abstract
A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
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