Complex film overlying a substrate with defined work function
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United States of America Patent
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Apr 8, 1997
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app pub date -
Apr 19, 1996
filing date -
Jan 19, 1994
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Abstract
Disclosed is a method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V.sub.th.
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