Method for forming a contact with activation and silicide forming heat treatment
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United States of America Patent
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-
Apr 15, 1997
Grant Date -
N/A
app pub date -
Jul 18, 1995
filing date -
Jul 21, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A field oxide film 12, an n.sup.+ -type dispersion layer 13, and an interlayer insulating film 14 are formed on a p-type semiconductor substrate, and a contact hole is formed therein. A titanium film 15 is deposited on the surface formed thus far, and arsenic is ion-implanted into a contact region through the titanium film, forming a phosphorus-dispersed layer. The substrate is heat-treated to activate the impurity in the phosphorus-dispersed layer 16 and to cause titanium and silicon to react with each other, thereby forming a titanium silicide film 17 in the contact region. A metal film is then deposited and patterned into a metal wiring 18 without removing a silicon nitride film 15a which has been produced from the titanium film.
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