Method for manufacturing semiconductor memory device having landing pad
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United States of America Patent
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Apr 22, 1997
Grant Date -
N/A
app pub date -
Oct 30, 1995
filing date -
May 31, 1995
priority date (Note) -
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Abstract
In manufacturing a high-integrated semiconductor memory device, there is disclosed a method for forming a trophy-shaped landing pad to a contact hole with a high aspect ratio by using a multiple-step etching process. According to the present invention, a storage node landing pad is formed by the multiple-step etching process and in different profiles via different etching processes from a bit line landing pad, thereby preventing a stringer or a bridge phenomenon occurring between the landing pads. Moreover, the trophy-shaped landing pad is formed by the multiple-step etching process, thereby securing an enough alignment margin and facilitating the manufacturing of 1 Gbit-grade DRAM by lowering the aspect ratio.
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