Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
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United States of America Patent
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Apr 22, 1997
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N/A
app pub date -
Aug 1, 1994
filing date -
Aug 1, 1994
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Abstract
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
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