MOSFET on SOI substrate
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United States of America Patent
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Apr 22, 1997
Grant Date -
N/A
app pub date -
Nov 15, 1995
filing date -
Nov 24, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A MOSFET is provided in the body silicon layer of an SOI substrate, for example as a mesa. A source region, a channel region, and a drain region are present. A gate electrode having a portion as a ridge on this channel region is also provided. For electrical connection of the channel region, a highly doped, preferably laterally arranged channel terminal region that is electrically conductively connected to the channel region and that has a contact applied thereon.
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