Barrier layer enhancement in metallization scheme for semiconductor device fabrication
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United States of America Patent
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Apr 29, 1997
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N/A
app pub date -
Oct 18, 1995
filing date -
Apr 29, 1991
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Abstract
The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer of the right thickness of 10-20 .ANG..
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