Active pixel sensor integrated with a pinned photodiode
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United States of America Patent
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Apr 29, 1997
Grant Date -
N/A
app pub date -
Apr 13, 1995
filing date -
Apr 13, 1995
priority date (Note) -
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Abstract
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.
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