Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology
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United States of America Patent
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Apr 29, 1997
Grant Date -
N/A
app pub date -
Mar 10, 1995
filing date -
Mar 10, 1995
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Abstract
A process for applying a TiN contact/via adhesion layer to high aspect ratio contact/via openings etched in a dielectric comprises providing a first layer of TiN on the bottom of the contact/via openings and then depositing the second layer of TiN on the first layer of TiN and on the sidewalls of the contact/via openings. The second layer of TiN serves as the contact/via adhesion layer for structurally supporting the adhesion of a tungsten plug in the contact/via openings. In the case where a contact is etched in the dielectric down to a junction with a titanium silicide layer on top, the first layer of TiN on the bottom of the contact opening is provided by a rapid thermal anneal in a nitrogen-containing atmosphere which converts the top part of the titanium silicide layer in the contact into a barrier TiN layer. Alternatively, in the case where a contact is etched in the dielectric down to an underlying barrier TiN layer, the first layer of TiN on the bottom of the contact opening can be provided by a contact etch which is able to stop on an underlying barrier TiN layer with minimum TiN loss. In the case where a via is etched in the dielectric down to an underlying TiN anti-reflection coating on top of a metal layer, the first layer of TiN on the bottom of the via is provided by a via etch which is able to stop on the underlying TiN anti-reflection coating on top of the metal layer with minimum TiN loss.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- ADVANCED MICRO DEVICES, INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cheung, Robin W | Cupertino, CA | 48 | 1686 |
Huang, Richard J | Milpitas, CA | 81 | 1918 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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