Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 6, 1997
Grant Date -
N/A
app pub date -
Jun 20, 1995
filing date -
Jun 28, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7 formed on first insulating layer 6, dielectric film 8 having a high dielectric constant and upper electrode 9, a second insulating film 11 having contact holes 13 which lead to lower electrode 7 and upper electrode 9 independently, diffusion barrier layer 17 which touches lower electrode 7 and upper electrode 9 at the bottom of contact holes 13, and interconnection layer 15 formed on diffusion barrier layer 17. In diffusion barrier layer 17 at the bottom of contact hole 13, a lamellar region made of granular crystal is formed.
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