Semiconductor device having overlapped storage electrodes
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United States of America Patent
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-
May 13, 1997
Issued Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Feb 12, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the first storage electrode; a second contact hole on the even impurity region, the second contact hole having an insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.
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