Process for fabricating a metallized interconnect structure in a semiconductor device
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United States of America Patent
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May 27, 1997
Grant Date -
N/A
app pub date -
Nov 2, 1995
filing date -
Nov 2, 1995
priority date (Note) -
Expired
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Abstract
A process for fabricating a metallized interconnect structure in a semiconductor device includes the steps of depositing a first aluminum layer (22) into a via opening (16) in a dielectric layer (18). A doping layer (24) is deposited by high density plasma sputtering to form a portion thereof in the bottom of the via opening (16). A second aluminum layer (26) is chemical vapor deposited to overlie the doping layer (24) and to fill the via opening (16). An annealing process can then be carried out to diffuse metal dopants from the doping layer (24) into nearby metal regions to provide a uniformly doped metal region within the via opening (16).
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