Method for forming damage free patterned layers adjoining the edges of high step height apertures
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United States of America Patent
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May 27, 1997
Grant Date -
N/A
app pub date -
Apr 29, 1996
filing date -
Apr 29, 1996
priority date (Note) -
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Abstract
A method for forming damage free patterned layers adjoining the edges of high step height apertures within integrated circuits. There is first provided a semiconductor substrate which has a first aperture formed therein. Formed upon the semiconductor substrate and into the first aperture is a blanket layer. The blanket layer has a second aperture formed therein where the blanket layer is formed into the first aperture. Formed then into the second aperture is a buffer layer. The buffer layer substantially planarizes the blanket layer. Formed then upon the semiconductor substrate is a blanket photoresist layer. The blanket photoresist layer and the blanket layer are then sequentially patterned to form a patterned photoresist layer and a damage free patterned layer.
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