Method for forming hemispherical grained silicon
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United States of America Patent
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Jun 3, 1997
Grant Date -
N/A
app pub date -
Nov 3, 1995
filing date -
Nov 3, 1995
priority date (Note) -
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Abstract
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
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