Hermetically sealed semiconductor device
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United States of America Patent
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-
Jun 3, 1997
Issued Date -
N/A
app pub date -
Feb 21, 1996
filing date -
Mar 30, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device which includes device bonding pads exposed through oxide windows formed in a passivation oxide layer providing electrical connections to the metallized regions, a bonding pad of a different material electrically connected to the device bonding pad through a barrier layer, and a protective layer overlying the edges of said passivation oxide layer in contact with the device to seal the edges of the protective layer and a seal formed at said windows whereby the device is protected against the environment without the necessity of a separate metal or ceramic housing.
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