Fast cycle time-low latency dynamic random access memories and systems and methods using the same

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United States of America Patent

PATENT NO 5636174
SERIAL NO

08584565

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Abstract

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A memory 200 comprising a plurality of rows and columns of memory cells, each column of cells associated with a conductive bitline 301. Memory 200 further includes precharge circuitry 204, 206 for precharging a selected one of the bitlines in response to a received control bit.

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Patent Owner(s)

Patent OwnerAddress
INTELLECTUAL VENTURES II LLC251 LITTLE FALLS DRIVE WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rao, G R Mohan Dallas, TX 114 3064

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