Mixer constructed from thick film balanced line structure
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United States of America Patent
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Jun 17, 1997
Issued Date -
N/A
app pub date -
May 14, 1996
filing date -
Jan 3, 1995
priority date (Note) -
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Abstract
A thick film balanced line multilayered structure having a substrate base of nominal 0.025 or 0.030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0.003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use as a balun, a capacitor or an autotransformer, for use in microwave mixers, power splitters, filters, resonators and other microwave devices. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.
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