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Abstract

In order to decrease peak value of current consumed by sense amplifiers provided in a high-speed read-out semiconductor memory for sensing and amplifying data of certain words of addresses having the same upper bits with upper bits of a read-out address when the upper bits are changed from those of its preceding read-out address, the sense amplifiers are divided into some groups. A group of sense amplifiers for sensing and amplifying data of words including a word indicated by the read-out address is activated firstly and other groups are controlled to be activated a little delayed according to logic of lower bits of the read-out address when the upper bits are changed. Therefore, the peak value of the current consumption Can be decreased without any operational delay.

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First Claim