Uniform tungsten silicide films produced by chemical vapor depostiton
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United States of America Patent
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-
Jul 1, 1997
Issued Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Dec 22, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
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