Laser processing method and alignment

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United States of America Patent

PATENT NO 5643801
SERIAL NO

08511466

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Abstract

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A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adachi, Hiroki Kanagawa, JP 191 4616
Ishihara, Hiroaki Kanagawa, JP 55 712
Nakashita, Kazuhisa Kanagawa, JP 10 329
Ohnuma, Hideto Kanagawa, JP 272 8063
Tanaka, Nobuhiro Kanagawa, JP 65 1056

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