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Abstract

An intermediate layer is formed between a memory layer and a writing layer. The intermediate layer shows in-plane magnetization at room temperature, and perpendicular magnetization within a temperature range within which the coercive force of the memory layer is lower than that of the writing layer. The Curie point of the intermediate layer is lower than that of the memory layer. Like a conventional method, light-intensity modulation overwriting is performed by irradiating laser light whose intensity has been modulated between high level and low level while applying a recording magnetic field after performing an initialization. Even when there are variations in the raised temperature by the irradiation of laser light of high level, it is possible to perform stable overwriting with light-intensity modulation by satisfactorily restraining the exchange forces between the intermediate layer and the writing layer from causing coupling.

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