Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device
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United States of America Patent
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-
Jul 8, 1997
Grant Date -
N/A
app pub date -
Jul 13, 1995
filing date -
Jul 14, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.
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