Silicon-containing deposited film
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United States of America Patent
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Jul 8, 1997
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N/A
app pub date -
Jun 7, 1995
filing date -
Aug 16, 1983
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Abstract
A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).
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