Capacitor apparatus and method of manufacture of same
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United States of America Patent
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Jul 8, 1997
Issued Date -
N/A
app pub date -
Aug 4, 1994
filing date -
Oct 14, 1993
priority date (Note) -
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Abstract
A method for fabricating a semiconductor capacitor having superior sidewall linearity and high capacitance in a small area wherein a titanate or tantalum barrier metal platform is deposited on the insulation layer of the semi conductor substrate. A capacitor structure comprising a first electrode layer of platinum or palladium, a dielectric layer preferably of a ferroelectric having a perovskite structure, and a second metal electrode layer is then constructed by sequential deposition of said layers. The subsequently deposited electrode metal of platinum or palladium will adhere to said barrier metal but delaminate from said insulation layer during high temperature cycling, yielding a high capacitance, small surface area structure.
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