Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation
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United States of America Patent
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Jul 8, 1997
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N/A
app pub date -
Jun 2, 1994
filing date -
Aug 8, 1991
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Abstract
The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.
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