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Abstract

An inorganic thin film EL device comprises, on an insulating substrate 1, a back electrode 2, an insulating layer 3, a light emission layer 4, an insulating layer 3, and a transparent electrode 5 formed on the substrate 1 in this order. The emission layer comprises lanthanum fluoride and at least one member selected from the group consisting of rare earth element metals and compounds thereof. The rare earth element is, for example, cerium, praseodymium, neodium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and mixture thereof. The compounds maybe those compounds of the rare earth elements and fluorine, chlorine, bromine, iodine and oxygen. The rare earth element is preferably present in the emission layer in an amount of from 5 to 90 wt %.

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First Claim