Trench MOS-gated device with a minimum number of masks
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United States of America Patent
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Jul 15, 1997
Issued Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Jun 7, 1995
priority date (Note) -
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Abstract
A low-voltage high-current discrete insulated-gate field-effect transistor which is made by a very economical process with two silicon etches. A buried poly gate gates conduction along a trench sidewall. The channel is provided by the residuum of an epi layer, and the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.
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