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Abstract

An apparatus and method for storing a momentarily applied binary signal in a non-volatile memory cell and for automatically returning to a state which is indicative of the applied binary signal upon power-up of the non-volatile memory. In one aspect, the non-volatile memory is connected to first and second power busses between which a power source supplies an operating voltage and a programming voltage of a substantially greater magnitude than the operating voltage. The non-volatile memory comprises a memory circuit which is connected between the first and second power busses. The memory circuit includes an input node, an output node, and a non-volatile element which is connected to the input and output nodes. The memory circuit responds to an input binary signal from the input node by latching in a first binary state which is indicative of the input binary signal. The non-volatile element responds to the programming voltage between the first and second power busses by storing the first binary state non-volatilely. After any interruption in power supplied in the first and second power busses, the non-volatile element latches the memory circuit in a binary state which is indicative of the first binary state.

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