Photovoltaic oxide charge measurement probe technique
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United States of America Patent
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Jul 22, 1997
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N/A
app pub date -
Dec 12, 1996
filing date -
May 12, 1995
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Abstract
An apparatus for measuring charge in an oxide layer overlying a silicon substrate containing very high density product chips characterized by thick oxides and high substrate doping levels in the field regions. A specially designed extremely thin conductive probe is pressed against the oxide layer whose charge is to be measured. A bias is applied to the probe for biasing the underlying silicon surface into accumulation or inversion. An intensity modulated light beam is focussed at the point of probe contact. The resulting amplitude modulated photovoltage is detected and applied to a computer to derive the value of the oxide charge therefrom.
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