Active-matrix device having silicide thin film resistor disposed between an input terminal and a short-circuit ring
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United States of America Patent
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-
Jul 22, 1997
Grant Date -
N/A
app pub date -
Dec 23, 1994
filing date -
Jul 5, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An active-matrix substrate including a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a shortcircuiting ring for shortcircuiting each of the signal lines at the periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 k.OMEGA. to 500 k.OMEGA. provided intermediate between an input terminal of each of the signal lines and the shortcircuiting ring.
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