Plasma processing apparatus
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United States of America Patent
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-
Jul 29, 1997
Grant Date -
N/A
app pub date -
May 23, 1996
filing date -
May 30, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A plasma processing apparatus is provided with a plasma generating mechanism including an electric discharge chamber and an annular antenna, a plasma diffusion chamber for diffusing plasma generated by the plasma generating mechanism for processing a substrate, a first temperature adjusting mechanism for adjusting the temperature of the plasma diffusion chamber, a magnetic field generating mechanism arranged around the plasma diffusion chamber to generate a magnetic field in the plasma diffusion chamber, an evacuating mechanism, a gas introducing mechanism, and a substrate holding mechanism. The magnetic field generating mechanism includes permanent magnets and a yoke, and a heat insulating portion is formed between the permanent magnets and the plasma diffusion chamber. A second temperature adjusting mechanism for adjusting the temperature of the permanent magnets is used. The temperature adjustment of the plasma diffusion chamber by the first temperature adjustment mechanism is independent of the temperature adjustment of the permanent magnets by the second temperature adjusting mechanism.
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