Electroplating solution for forming Pb-Sn alloy bump electrodes on semiconductor wafer surface
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United States of America Patent
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Jul 29, 1997
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N/A
app pub date -
Jun 26, 1995
filing date -
Jun 30, 1994
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Abstract
An electroplating solution (A), comprises an aqueous solution consisting essentially of lead phenolsulfonate: 1 to 250 g/liter in terms of Pb content; tin phenolsulfonate: 0.1 to 250 g/liter in terms of Sn content; phenolsulfonic acid: 20 to 300 g/liter; polyoxyethylene polyoxypropylene alkylamine: 1 to 50 g/liter; a 1-naphthaldehyde derivative: 0.001 to 1 g/liter; and an aldol sulfanilic acid derivative: 0.1 to 30 g/liter; or an aqueous solution (B) consisting essentially of lead methanesulfonate: 1 to 250 g/liter in terms of Pb content; tin methanesulfonate: 0.1 to 250 g/liter in terms of Sn content; methanesulfonic acid: 20 to 300 g/liter; polyoxyethylene polyoxypropylene alkylamine: 1 to 50 g/liter; and an aldol sulfanilic acid derivative: 0.1 to 30 g/liter. Each of the electroplating aqueous solutions (A) and (B) contains 50 ppb or less radioactive isotopes, whereby Pb-Sn alloy bump electrodes with improved uniformity in height and improved surface smoothness can be formed on a surface of a semiconductor wafer.
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