Method for fabricating semiconductor device containing excessive silicon in metal silicide film
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United States of America Patent
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Jul 29, 1997
Grant Date -
N/A
app pub date -
Jan 4, 1995
filing date -
Jan 18, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a semiconductor device which includes a metal silicide film for electrically connecting a first silicon region containing a p-type impurity with a second silicon region containing an n-type impurity is disclosed. The method includes the step of depositing the metal silicide film so as to contain excessive silicon. Such excessive silicon is precipitated in silicide grain boundaries in the metal silicide film and thus makes a diffusion path of impurities along the silicide grain boundaries discontinuous.
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