Semiconductor device with pluralities of gate electrodes
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United States of America Patent
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-
Jul 29, 1997
Grant Date -
N/A
app pub date -
Feb 2, 1996
filing date -
Feb 6, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device has a structure in which pluralities of gate electrodes, drain electrodes, and source electrodes extend in parallel to each another. The semiconductor device includes at least one isolation area formed in a direction perpendicular to at least one gate electrode so as to separate one active layer area formed on a semiconductor substrate into a plurality of active layer areas. The at least one gate electrode is connected to each of the plurality of active layer areas separated by the at least one isolation area.
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