Method for manufacturing domain-inverted region, optical wavelength conversion device utilizing such domain-inverted region and method for fabricating such device

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United States of America Patent

PATENT NO 5652674
SERIAL NO

08521322

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Abstract

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A comb-shaped electrode and a planar electrode are formed on a surface and a bottom face of a substrate. Then, a DC voltage on which a pulse voltage is superimposed is applied to the electrodes using a DC power source and a pulse power source so as to apply a DC electric field on which a pulse electric field is superimposed to the substrate. As a result, periodic domain-inverted regions are formed by applying even a small pulse electric field. Since the applied electric field is highly uniform in a face of the substrate, the domain-inverted regions having a uniform periodic structure are formed. Alternatively, after the comb-shaped electrode is covered with an insulating film, the pulse voltage is applied to the electrodes using the pulse power source so as to apply the pulse electric field to the substrate. As a result, since movement of free charges in the surface of a crystal is restrained so as to inhibit the spread of domain inversion in a horizontal direction, a uniform short-periodic domain-inverted structure is formed. According to the present invention, deep short-periodic domain-inverted regions are uniformly formed over a large area of the substrate. As a result, an optical wavelength conversion device having a short wavelength with high efficiency can be manufactured.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mizuuchi, Kiminori Neyagawa, JP 154 2036
Yamamoto, Kazuhisa Settsu, JP 260 4095

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