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Abstract

A method is provided for fabricating a phase shift mask of the out rigger sub-resolution type capable of accurately fabricating an ultra-fine semiconductor circuit. The method includes the steps of depositing a first photoshield metal layer and a first phase shift material layer over a transparent substrate, defining a transmission region for forming an actual pattern and a sub-pattern region for the transmission region, and removing portions of the photoshield metal layer and phase shift material layer disposed at the defined regions, depositing a second phase shift material layer over the resulting structure, and selectively etching back the second phase shift material layer to form phase shift material side walls, depositing over the resulting structure a photoresist film, and etching back the optional material layer such that both the first and second phase shift material layers are sufficiently exposed at their upper surfaces, etching back the first and second phase shift material layers such that they are flush with the first photoshield metal layer to form a phase shift layer at the sub-pattern region, and depositing a second photoshield material layer over the resulting structure, and etching back the second photoshield material layer to form second photoshield material side walls on the phase shift layer side walls.

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First Claim