Microlithographic structure with an underlayer film comprising a thermolyzed azide
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United States of America Patent
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Sep 2, 1997
Grant Date -
N/A
app pub date -
Dec 13, 1994
filing date -
Dec 13, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.
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