Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
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United States of America Patent
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Sep 2, 1997
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Jul 26, 1994
filing date -
Jul 27, 1993
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Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
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