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Abstract

A new approach for creating metal pillar via structures, for multilevel metallization structures, used in the fabrication of MOSFET devices, has been developed. Consecutive metal depositions are performed, followed by a RIE procedure, used to create the desired first level metallization shape in the metallizations. Another RIE procedure than selectively forms the metal pillar via structure on the underlying first level metallization structure. Composite dielectric material, including a spin on glass layer, is used to fill the spaces between metal structures. Chemical mechanical polishing is used to create the desired planarity, followed by the construction of a second level metallization structure, contacting the underlying first level metallization structure by use of the metal pillar via structure.

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