Automatic film deposition control method and system
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United States of America Patent
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Sep 9, 1997
Grant Date -
N/A
app pub date -
May 3, 1995
filing date -
May 3, 1995
priority date (Note) -
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Abstract
A film deposition control system and method in which a deposition rate monitor and an ellipsometer are used to control the thickness of a thin film being deposited on a wafer. The ellipsometer is also used to detect the refractive index of the thin film being deposited, and the detected refractive index value is used to control the ratio of the reactive gases being injected into the processing chamber.
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