Method of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
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United States of America Patent
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Sep 9, 1997
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app pub date -
Jun 7, 1995
filing date -
Aug 1, 1994
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Abstract
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an amorphous nitride barrier layer (e.g. Ti--Si--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the amorphous nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The amorphous nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
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