Integrated circuit spring contact fabrication methods
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United States of America Patent
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Sep 9, 1997
Grant Date -
N/A
app pub date -
Dec 21, 1995
filing date -
Dec 21, 1995
priority date (Note) -
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Abstract
An integrated-circuit interconnect which can be formed at the wafer level is achieved by depositing an intentionally stressed contact layer over a release layer which is subsequently removed. The removal of the release layer permits a portion of the contact layer to curve away from the surface of an integrated circuit chip. The result is a spring contact having a base portion joined to a metal member of the chip and a spring portion which is available for joining to other metal members, e.g., on a substrate or another chip. The resilience of the spring portion can also be used to position and align integrated circuit elements.
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