Crystallization of grain boundery phases in silicon carbide ceramics
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United States of America Patent
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Sep 9, 1997
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app pub date -
Jun 20, 1995
filing date -
Dec 29, 1992
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Abstract
A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300.degree. C. to 2100.degree. C. under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.
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