Method of depositing thin nitride layer on gate oxide dielectric
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United States of America Patent
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Sep 16, 1997
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N/A
app pub date -
Apr 28, 1995
filing date -
Nov 30, 1993
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Abstract
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.
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