Thin film capacitor with small leakage current and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5670408
SERIAL NO

08510488

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC CORPORATIONTOKYO10615

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyasaka, Yoichi Tokyo, JP 34 825
Yamamichi, Shintaro Tokyo, JP 89 1091

Cited Art Landscape

Patent Info (Count) # Cites Year
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5293510 Semiconductor device with ferroelectric and method of manufacturing the same 104 1991
 
TEXAS INSTRUMENTS INCORPORATED (2)
* 5585300 Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes 77 1994
* 5576928 High-dielectric-constant material electrodes comprising thin platinum layers 57 1995
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 5568352 Capacitor and manufacturing method thereof 15 1995
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SOLID STATE MEASUREMENTS, INC. (2)
* 2005/0093,563 CONDUCTANCE-VOLTAGE (GV) BASED METHOD FOR DETERMINING LEAKAGE CURRENT IN DIELECTRICS 0 2003
6879176 Conductance-voltage (GV) based method for determining leakage current in dielectrics 1 2003
 
LUCENT TECHNOLOGIES INC. (1)
* 6075691 Thin film capacitors and process for making them 68 1997
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
TOYOTA JIDOSHA KABUSHIKI KAISHA (1)
4723791 Suspension of vehicle 26 1986
 
LG Semicon Co., Ltd. (1)
* 5893980 Semiconductor device capacitor fabrication method 6 1996
* Cited By Examiner