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Abstract

Methods are disclosed for fabricating a monolithic array of radiation detectors and associated readout circuits, as are monolithic arrays fabricated by the methods. One method includes the steps of (a) providing a first substrate (10) having a first major surface (10a) and an oppositely disposed second major surface (10b); (b) doping the first major surface with a dopant having a first type of electrical conductivity to form a first doped region (12) adjacent to the first major surface; (c) forming an electrically insulating dielectric layer (14) on the first major surface; (d) thermally bonding a second substrate to the dielectric layer and thinning the second substrate to provide a semiconductor layer (16) having a predetermined thickness; (e) delineating the semiconductor layer into a plurality of adjacently disposed electrically isolated regions each of which corresponds to a radiation detector unit cell; (f) fabricating a readout integrated circuit (17) within a portion of the semiconductor layer within each of the unit cells; (g) conductively coupling (22, 23) each of the readout integrated circuits to an underlying portion of the first doped region; and (h) doping the second major surface with a dopant having a second type of electrical conductivity to form a second doped region (24) adjacent to the second major surface. The second major surface is a radiation receiving surface of the monolithic array.

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First Claim